TYTUŁ ARTYKUŁU

Impact of the Etching Time and Current Density on Capacitance Voltage Characteristics of P-Type of Porous Silicon

AUTORZY
Tareq H. Abood, Hasan A. Hadi, Mahmood S. Karim, Ali T. Mohi
TYTUŁ CZASOPISMA
World Scientific News
WYDANIE
2017 / Tom 67 / Numer 2
STRONY
149 - 160
ROK
2017
WYDAWCA
Scientific Publishing House „DARWIN”
ISSN
2392-2192

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CZYSTY TEKST

Tareq H. Abood, Hasan A. Hadi, Mahmood S. Karim, Ali T. Mohi, Impact of the Etching Time and Current Density on Capacitance Voltage Characteristics of P-Type of Porous Silicon , World Scientific News, 2017 / Tom 67 / Numer 2, s. 149 - 160

BIBTEX

Tareq H. Abood, Hasan A. Hadi, Mahmood S. Karim, and Ali T. Mohi. Impact of the Etching Time and Current Density on Capacitance Voltage Characteristics of P-Type of Porous Silicon. World Scientific News, 67(2):149–160, 2017.

Pokaż kod BibTeX 
@article{bazhum42672,
  author = {Abood, Tareq H. and Hadi, Hasan A. and Karim, Mahmood S. and Mohi, Ali T.},
  title = {{Impact of the Etching Time and Current Density on Capacitance Voltage Characteristics of P-Type of Porous Silicon}},
  journal = {World Scientific News},
  year = {2017},
  volume = {67},
  number = {2},
  pages = {149--160},
  issn = {2392-2192},
  url = {https://bazhum.muzhp.pl/articles/42672}
}